rf0 1122 , rev . a ( 4/9/13 ) ?201 3 microsemi corporation page 1 of 6 lc e6.5 C lc e170a available 1500 watt l ow capacitance transient v oltage s uppressor description case 1 package also available in : hirel case 1 package ( axial - lead ) mlce6.5 C mxlce170a do - 13 ( metal ) package ( axial - lead ) lc6.5 C lc170a do - 21 5 ab and do - 214 ab package ( surface mounts ) smc g (j) lce6.5 C smc g (j) lce170a msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com this transient voltage suppressor (tvs) product family includes a rectifier diode el ement in series and in an opposite direction . this allows it to achieve low capacitance performance below 100 pf (see f igure 2 ). the low level of tvs capacitance may be used for protecting higher frequency applications in inductive switching environments or electrical sys tems involving secondary lightning effects per iec61000 -4- 5 as well as rtca/do - 160 or arinc 429 for airborne avionics. with virtually instantaneous response, they also protect fr om esd and eft per iec61000 -4- 2 and iec61000 -4- 4. if bipolar transient capability is required, two of these low capacitance tvs devices may be used in parallel in opposite directions (ant i - parallel) for complete ac protection as shown in f igure 4 . important: for the latest information, visit our website http://www.microsemi.com . features ? unidirectional low - capacitance tvs series (for bidirectional see f igure 4 ). ? economical plastic encapsulated tvs series for thru - hole mounting. ? suppresses transients up to 1500 watts @ 10/1000 s (see f igure 1 )*. ? clamps transient in less than 100 pico seconds . ? working voltage (v wm ) range 6.5 v to 170 v . ? rohs compliant versions available . applications / benefits ? protection from switching transients and induced rf . ? low capacitance for data line protection up to 1 mhz . ? protection for aircraft fast data rate lines up to level 5 waveform 4 and level 2 wa veform 5a in rtca/do - 160d (also see micronote 130 ) & arinc 429 with bit rates of 100 kb/s (per arinc 429, part 1, par 2.4.1.1) . ? esd & eft protection per iec 61000 -4- 2 and -4-4. ? secondary lightning protection per iec61000 -4- 5 with 42 o hms source impedance: class 1: lc e 6.5 to lc170a class 2: lc e 6.5 to lc150a class 3: lc e 6.5 to lc70a class 4: lc e 6.5 to lc36a ? secondary lightning protection per iec61000 -4- 5 with 12 o hms source impedance: class 1 : lc e 6.5 to lc90 a class 2: lc e 6.5 to lc45 a class 3: lc e 6.5 to lc22a class 4: lc e 6.5 to lc11a ? secondary lightning protection per iec61000 -4- 5 with 2 o hms source impedance: class 2: lc e 6.5 to lc20a class 3: lc e 6.5 to lc10a downloaded from: http:///
rf0 1122 , rev . a ( 4/9/13 ) ?201 3 microsemi corporation page 2 of 6 lc e6.5 C lc e170a maximum ratings parameters/test conditions symbol value unit junction and storage temperature t j and t stg -6 5 to +15 0 oc thermal resistance, junction to lead @ 0.375 inch (10 mm) from body r ? jl 22 oc /w thermal resistance, junction to am bient (1 ) r ? ja 82 oc /w peak pulse power @ t l = +25 oc (2) p pp 1500 w rated average p ower d issipation (3 ) @ t l = + 40 oc @ t a = +25 oc p m(av) 5 1.52 w solder temperature @ 10 s t sp 260 o c notes : 1. w hen mounted on fr4 pc board with 4 mm 2 copper pads (1 oz) and track width 1 mm, length 25 mm . 2. at 10/1000 s with repetition rate of 0.01% or less (see f igure 1 ). 3 . at 3/8 inch ( 10 mm ) from body. tvs devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage (v wm ) except for transients that briefly drive the device into avalanche breakdown (v br to v c region) . also see f igure 4 for further protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively. mechanical and packaging ? case: void- free transfer molded thermosetting epoxy body meeting ul94v -0. ? terminals: tin - lead or rohs c ompliant annealed matte -t in plating readily solderable per mil - std - 750 method 2026 . ? marking: part number and polarity band . ? polarity: cathode indicated by band . ? tape & reel option: standard per eia - 296 (add tr suffix to part number) . consult factory for quantities. ? weight: approx 1. 5 gr ams. ? see p ackage d imensions on last page. part nomenclature lc e 6.5 a (e3) low capacitance rated encapsulated plastic package reverse standoff voltage (v wm ) ( see electrical characteristics t able ) rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant +/ - 5% tolerance level symbols & definitions symbol definition i (br) breakdown current: the current used for measuring b reakdown v oltage v (br) . v (br) breakdown voltage: this is the b reakdown v oltage the device will exhibit at 25 o c. v wm rated working standoff voltage: the maximum peak voltage that can be applied over the operating temperature range. v c maximum clamping voltage: the maximum peak voltage appearing across the tvs when subjec ted to the peak pulse current in a one millisecond time interval. the peak pulse voltage is the combination of vo ltage rise due to both the series resistance and thermal rise and positive temperature coef ficient v(br) . i pp peak imp ulse current: the peak current during the impulse . p pp peak pulse power: the pulse power as determined by the product of v c and i pp . i d standby current: the current at the standoff vol tage v wm . downloaded from: http:///
rf0 1122 , rev . a ( 4/9/13 ) ?201 3 microsemi corporation page 3 of 6 lc e6.5 C lc e170a electrical characteristic s @ 25 o c microsemi part number r ated working standoff voltage v wm v olts breakdown voltage maximum standby current i d @v wm a maximum clamping voltage v c @ i pp v olts maximum peak im pulse current i pp @ 10/1000 s a mps capaci - tance @ 0 volts f = 1 mh z c pf working inverse blocking voltage v wib v olts inverse blocking leakage current i ib @ v wib a peak inverse blocking voltage volts v pib v olts v (br) v olts @ i (br) ma min max lc e 6.5 lc e 6.5a lc e 7.0 lc e 7.0a 6.5 6.5 7.0 7.0 7.22 7 .22 7.78 7.78 8.82 7.98 9.51 8.60 10 10 10 10 1000 1000 500 500 12.3 11.2 13.3 12.0 100 100 100 100 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 7.5 lc e 7.5a lc e 8.0 lc e 8.0a 7.5 7.5 8.0 8.0 8.33 8.33 8.89 8.89 10.2 9.21 10.9 9.83 10 10 1 1 250 250 100 100 14.3 12.9 15.0 13.6 100 100 100 100 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 8.5 lc e 8.5a lc e 9.0 lc e 9.0a 8.5 8.5 9.0 9.0 9.44 9.44 10.0 10.0 11.5 10.4 12.2 11.1 1 1 1 1 50 50 10 10 15.9 14.4 16.9 15.4 94 100 89 97 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 10 lc e 10a lc e 11 lc e 11a 10 10 11 11 11.1 11.1 12.2 12.2 13.6 12.3 14.9 13.5 1 1 1 1 5 5 5 5 18.8 17.0 20.1 18.2 80 88 74 82 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 12 lc e 12a lc e 13 lc e 13a 12 12 13 13 13.3 13.3 14.4 14.4 16.3 14.7 17.6 15.9 1 1 1 1 5 5 5 5 22.0 19.9 23.8 21.5 68 75 63 70 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 14 lc e 14a lc e 15 lc e 15a 14 14 15 15 15.6 15.6 16.7 16.7 19.1 17.2 20.4 18.5 1 1 1 1 5 5 5 5 25.8 2 3.2 26.9 24.4 58 65 56 61 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 16 lc e 16a lc e 17 lc e 17a 16 16 17 17 17.8 17.8 18.9 18.9 21.8 19.7 23.1 20.9 1 1 1 1 5 5 5 5 28.8 26.0 30.5 27.6 52 57 49 54 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 18 lc e 18a lc e 20 lc e 20a 18 18 20 20 20.0 20.0 22.2 22.2 24.4 22.1 27.1 24.5 1 1 1 1 5 5 5 5 32.2 29.2 35.8 32.4 46 51 42 46 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 22 lc e 22a lc e 24 lc e 24a 22 22 24 24 24.4 24.4 26.7 26.7 29.8 26.9 32.6 29.5 1 1 1 1 5 5 5 5 39.4 35.5 43.0 38.9 38 42 35 39 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 26 lc e 26a lc e 28 lc e 28a 26 26 28 28 28.9 28.9 31.1 31.1 35.3 31.9 38.0 34.4 1 1 1 1 5 5 5 5 46.6 42.1 50.1 45.4 32 36 30 33 100 100 10 0 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 30 lc e 30a lc e 33 lc e 33a 30 30 33 33 33.3 33.3 36.7 36.7 40.7 36.8 44.9 40.6 1 1 1 1 5 5 5 5 53.5 48.4 58.0 53.3 28 31 25.4 28.1 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 36 lc e 36a lc e 40 lc e 40a 36 36 40 40 40.0 40.0 44.4 44.4 48.9 44.2 54.3 49.1 1 1 1 1 5 5 5 5 64.3 58.1 71.4 64.5 23.3 25.8 21.0 23.3 100 100 100 100 75 75 75 75 10 10 10 10 100 100 100 100 lc e 43 lc e 43a lc e 45 lc e 45a 43 43 45 45 47.8 47.8 50.0 50.0 58.4 52.8 61.1 55.3 1 1 1 1 5 5 5 5 76.7 69.4 80.3 72.7 19.5 21.6 18.7 20.6 100 100 100 100 150 150 150 150 10 10 10 10 200 200 200 200 lc e 48 lc e 48a lc e 51 lc e 51a 48 48 51 51 53.3 53.3 56.7 56.7 65.1 58.9 69.3 62.7 1 1 1 1 5 5 5 5 85.5 77.4 91.1 82.4 17.5 19.4 16.5 18.2 100 100 100 10 0 150 150 150 150 10 10 10 10 200 200 200 200 continued. downloaded from: http:///
rf0 1122 , rev . a ( 4/9/13 ) ?201 3 microsemi corporation page 4 of 6 lc e6.5 C lc e170a electrical characteristics @ 25 o c (continued ) microsemi part number rated working standoff voltage v wm v olts breakdown voltage maximum standby current i d @v wm a maximum clamping voltage v c @ i pp v olts maximum peak im pulse current i pp @ 10/1000 s a mps capaci - tance @ 0 volts f = 1 mhz c pf working inverse blocking voltage v wib v olts inverse blocking leakage current i ib @ v wib a peak inverse blocking voltage volts v pib v olts v (br) v olts @ i (br) ma min max lc e 54 lc e 54a lc e 58 lc e 58a 54 54 58 58 60.0 60.0 64.4 64.4 73.3 66.3 78.7 71.2 1 1 1 1 5 5 5 5 96.3 87.1 103.0 93.6 15.6 17.2 14.6 16.0 100 100 100 100 150 150 150 150 10 10 10 10 200 200 200 200 lc e 60 lc e 60a lce 64 lc e 64a 60 60 64 64 66.7 66.7 71.1 71.1 81.5 73.7 86.9 78.6 1 1 1 1 5 5 5 5 107.0 96.8 114.0 103.0 14.0 15.5 13.2 14.6 90 90 90 90 150 150 150 150 10 10 10 10 200 200 200 200 lc e 70 lc e 70a lc e 75 lc e 75a 70 70 75 75 77.8 77.8 83.3 83.3 95.1 86.0 102.0 92 .1 1 1 1 1 5 5 5 5 125 113 134 121 12.0 13.3 11.2 12.4 90 90 90 90 150 150 150 150 10 10 10 10 200 200 200 200 lc e 80 lc e 80a lc e 90 lc e 90a 80 80 90 90 88.7 88.7 100 100 108 98.0 122 111 1 1 1 1 5 5 5 5 142 129 160 146 10.6 11.6 9.4 10.3 90 90 90 90 150 150 300 300 10 10 10 10 200 200 200 200 lc e 100 lc e 100a lc e 110 lc e 110a 100 100 110 110 111 111 122 122 136 123 149 135 1 1 1 1 5 5 5 5 179 162 196 178 8.4 9.3 7.7 8.4 90 90 90 90 300 300 300 300 10 10 10 10 200 200 400 400 lc e 120 lc e 120a lc e 130 lc e 130a 120 12 0 130 130 133 133 144 144 163 147 176 159 1 1 1 1 5 5 5 5 214 193 231 209 7.0 7.8 6.5 7.2 90 90 90 90 300 300 300 300 10 10 10 10 400 400 400 400 lc e 150 lc e 150a lc e 160 lc e 160a 150 150 160 160 167 167 178 178 204 185 218 197 1 1 1 1 5 5 5 5 268 243 287 259 5.6 6.2 5.2 5.8 90 90 90 90 300 300 300 300 10 10 10 10 400 400 400 400 lc e 170 lc e 170a 170 170 189 189 231 209 1 1 5 5 304 275 4.9 5.4 90 90 300 300 10 10 400 400 note 1: tvs devices are normally selected according to the reverse stando ff v oltage ( v wm ) which should be equal to or greater than the dc or continuous peak operating voltage level. downloaded from: http:///
rf0 1122 , rev . a ( 4/9/13 ) ?201 3 microsemi corporation page 5 of 6 lc e6.5 C lc e170a graphs pulse time (tw) in s figure 1 peak pulse power vs pulse time (tw) in s p pp - peak pulse power - kw downloaded from: http:///
rf0 1122 , rev . a ( 4/9/13 ) ?201 3 microsemi corporation page 6 of 6 lc e6.5 C lc e170a package dimensions notes: 1 dimensions are in inches. 2 millimeter equivalents are given for general information only. 3 the major diameter is essentially constant along its length. 4 in accordance with asme y14.5m, diameters are equivalent to x symbology. schematic applications the tvs low capacitance device configuration is shown in f igure 2. as a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the same polarity direction as the tvs as shown in f igure 3. in applications where random high voltage transients occur, this will prevent reverse transient s from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. the added rect ifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the tvs clamping voltage v c . the microsemi recommended rectifier part number is the e lcr80 for the application in f igure 3 . if using two (2 ) low capacitance tvs devices in anti - parallel for bidirectional applications, this added protective feature for both directions (including th e reverse of each rectifier diode) is also provided. the unidirectional and bidirectional configurations in f igur e 3 and 4 will both result in twice the capacitance of f igure 2. figure 2 figure 3 figure 4 tvs with internal low optional unidirectional optional bidirectional capacitance diode configuration (tvs and c onfiguration (two tvs separate rectifier diode devices in anti - parallel) in parallel) dimensions symbol inches millimeters min max min max bd 0 .190 0 .205 4.826 5.207 bl 0 .360 0 .375 9.146 9.527 ld 0 .038 0 .042 0 .958 1.074 ll 1.10 1.625 27.9 41.28 downloaded from: http:///
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